Self-assembly of triangular quantum dots on (111)A substrates by droplet epitaxy

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878280· OSTI ID:22280320

Jo, M.; Mano, T.; Abbarchi, M.; Kuroda, T. ^[1]; Sakoda, K. ^[2]

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1. Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
2. Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

We report the self-assembly of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature. The mechanism of the morphological change is discussed in terms of different growth rates of step edges on a (111)A substrate.

• OSTI ID: 22280320
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DROPLETS
EPITAXY
GALLIUM ARSENIDES
MORPHOLOGICAL CHANGES
QUANTUM DOTS
SUBSTRATES
TEMPERATURE DEPENDENCE