Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen δ-doping technique

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878293· OSTI ID:22280290

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki ^[1]; Elborg, Martin; Sakoda, Kazuaki ^[2]

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1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
2. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen δ-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen δ-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

• OSTI ID: 22280290
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
CONCENTRATION RATIO
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
QUANTUM WELLS
SUBSTRATES