Profiling of the injected charge drift current transients by cross-sectional scanning technique
- Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius (Lithuania)
The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.
- OSTI ID:
- 22278124
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
CURRENT DENSITY
DIFFUSION
ELECTRIC CURRENTS
ELECTRIC FIELDS
IRRADIATION
NEUTRON FLUENCE
PHYSICAL RADIATION EFFECTS
RECOMBINATION
SI SEMICONDUCTOR DETECTORS
SILICON DIODES
TRANSIENTS