Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Journal Article · Fri Feb 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4865296· OSTI ID:22278082

Pomeroy, J.; Kuball, M. ^[1]

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1. H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

• OSTI ID: 22278082
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
COMPUTERIZED SIMULATION
ELECTRON MOBILITY
GALLIUM NITRIDES
HEAT FLUX
HETEROJUNCTIONS
LAYERS
NUCLEATION
POLARIZATION
SUBSTRATES
TEMPERATURE GRADIENTS
THERMAL CONDUCTIVITY
THERMOGRAPHY
TRANSISTORS