Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics
- Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India)
- Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China)
- Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China)
- Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)
We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3} ≡ SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ΔN{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ΔN{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.
- OSTI ID:
- 22278047
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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