Enhancement of electron mobility in asymmetric coupled quantum well structures
- Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761 008, Odisha (India)
We study the low temperature multisubband electron mobility in a structurally asymmetric GaAs/Al{sub x}Ga{sub 1-x}As delta doped double quantum well. We calculate the subband energy levels and wave functions through selfconsistent solution of the coupled Schrodinger equation and Poisson's equation. We consider ionized impurity scattering, interface roughness scattering, and alloy disorder scattering to calculate the electron mobility. The screening of the scattering potentials is obtained by using static dielectric response function formalism within the random phase approximation. We analyze, for the first time, the effect of asymmetric structure parameters on the enhancement of multisubband electron mobility through intersubband interactions. We show that the asymmetric variation of well width, doping concentration, and spacer width considerably influences the interplay of scattering mechanisms on mobility. Our results of asymmetry induced enhancement of electron mobility can be utilized for low temperature device applications.
- OSTI ID:
- 22278043
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ASYMMETRY
CONCENTRATION RATIO
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON MOBILITY
ENERGY LEVELS
GALLIUM ARSENIDES
INTERFACES
POISSON EQUATION
POTENTIALS
QUANTUM WELLS
RANDOM PHASE APPROXIMATION
RESPONSE FUNCTIONS
ROUGHNESS
SCATTERING
SCHROEDINGER EQUATION