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Title: Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions

Abstract

In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices.

Authors:
 [1]; ; ;  [1];  [2]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China)
  2. Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062 (China)
Publication Date:
OSTI Identifier:
22278037
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GRAPHENE; GREEN FUNCTION; NANOSTRUCTURES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS

Citation Formats

Zhou, Yuhong, Wenhua College, Huzhong University of Science and Technology, Wuhan City, Hubei Province 430074, Zhang, Daoli, Zhang, Jianbing, Miao, Xiangshui, Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, and Ye, Cong. Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions. United States: N. p., 2014. Web. doi:10.1063/1.4866094.
Zhou, Yuhong, Wenhua College, Huzhong University of Science and Technology, Wuhan City, Hubei Province 430074, Zhang, Daoli, Zhang, Jianbing, Miao, Xiangshui, Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, & Ye, Cong. Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions. United States. https://doi.org/10.1063/1.4866094
Zhou, Yuhong, Wenhua College, Huzhong University of Science and Technology, Wuhan City, Hubei Province 430074, Zhang, Daoli, Zhang, Jianbing, Miao, Xiangshui, Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, and Ye, Cong. 2014. "Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions". United States. https://doi.org/10.1063/1.4866094.
@article{osti_22278037,
title = {Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions},
author = {Zhou, Yuhong and Wenhua College, Huzhong University of Science and Technology, Wuhan City, Hubei Province 430074 and Zhang, Daoli and Zhang, Jianbing and Miao, Xiangshui and Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 and Ye, Cong},
abstractNote = {In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices.},
doi = {10.1063/1.4866094},
url = {https://www.osti.gov/biblio/22278037}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 115,
place = {United States},
year = {Fri Feb 21 00:00:00 EST 2014},
month = {Fri Feb 21 00:00:00 EST 2014}
}