Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Li, Mingda; Snider, Gregory; Jena, Debdeep; Esseni, David

doi:10.1063/1.4866076

Title: Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

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Abstract

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.

Authors:

Li, Mingda; Snider, Gregory; Jena, Debdeep; Esseni, David ^[1]

University of Udine, Udine (Italy)

Publication Date:: Fri Feb 21 00:00:00 EST 2014

OSTI Identifier:: 22278036

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY GAP; FIELD EFFECT TRANSISTORS; HAMILTONIANS; HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS; TUNNEL EFFECT; TWO-DIMENSIONAL CALCULATIONS

Citation Formats


                    Li, Mingda, Snider, Gregory, Jena, Debdeep, Grace Xing, Huili, E-mail: hxing@nd.edu, and Esseni, David. Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4866076.

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                    Li, Mingda, Snider, Gregory, Jena, Debdeep, Grace Xing, Huili, E-mail: hxing@nd.edu, & Esseni, David. Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor.  United States.  https://doi.org/10.1063/1.4866076

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                    Li, Mingda, Snider, Gregory, Jena, Debdeep, Grace Xing, Huili, E-mail: hxing@nd.edu, and Esseni, David. 2014.  
        "Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor".  United States.  https://doi.org/10.1063/1.4866076.

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@article{osti_22278036,

  title        = {Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor},

  author       = {Li, Mingda and Snider, Gregory and Jena, Debdeep and Grace Xing, Huili, E-mail: hxing@nd.edu and Esseni, David},

  abstractNote = {The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.},

  doi          = {10.1063/1.4866076},

  url          = {https://www.osti.gov/biblio/22278036},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 7,

  volume       = 115,

  place        = {United States},

  year         = {Fri Feb 21 00:00:00 EST 2014},

  month        = {Fri Feb 21 00:00:00 EST 2014}

}

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