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Title: Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg{sub 1/3}Nb{sub 2/3})-PbTiO{sub 3} magnetoelectric heterostructures

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4866495· OSTI ID:22278017
; ; ; ; ;  [1]
  1. Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

Magnetostrictive Fe-Ga thin layers were deposited on 〈110〉-oriented Pb(Mg{sub 1/3}Nb{sub 2/3})-30%PbTiO{sub 3} (PMN-30%PT) substrates by pulsed laser deposition. The as-prepared heterostructures showed columnar arrays aligned in the out-of-plane direction. Transmission electron microscopy revealed nanocrystalline regions within the columnar arrays of the Fe-Ga film. The heterostructure exhibited a strong converse magnetoelectric coupling effect of up to 4.55 × 10{sup −7} s m{sup −1}, as well as an electric field tunability of the in-plane magnetic anisotropy. Furthermore, the remanent magnetization states of the Fe-Ga films can be reversibly and irreversibly changed by external electric fields, suggesting a promising and robust application in magnetic random access memories and spintronics.

OSTI ID:
22278017
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English