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Title: Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy

Abstract

Photoluminescence (PL) and thermally stimulated luminescence (TSL) properties of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} (Ce:GAGG) crystals have been studied in the temperature range of 10–300 K under electron excitation from the 4f level to the 5d levels of Ce{sup 3+} ions. PL and TSL spectra commonly exhibit a prominent band around 2.31 eV, due to electron transitions from the lowest 5d (5d{sub 1}) level to the 4f levels. The intensity of the Ce{sup 3+} PL band is significantly changed with temperature under excitation from the lowest 4f level to a higher-lying 5d (5d{sub 2}) level, whereas it is scarcely changed under excitation from the 4f level to the 5d{sub 1} level. Such change correlates well with the appearance of TSL glow peaks at 84 and 175 K. The luminescence properties are apparently influenced by the thermal behavior of electrons trapped at some lattice site, but not by nonradiative processes of electrons starting from the 5d{sub 1} level. The phosphorescence process will be discussed using a phenomenological model based on the results obtained.

Authors:
; ;  [1];  [2]
  1. Department of Physics, Faculty of Science, Yamagata University, 1-4-12 Kojirakawa, Yamagata 990-8560 (Japan)
  2. New Industry Creation Hatchery Center, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22277962
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CERIUM IONS; CRYSTALS; ELECTRONS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; EXCITATION; GADOLINIUM COMPOUNDS; GALLIUM OXIDES; PHOSPHORESCENCE; PHOTOLUMINESCENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THERMOLUMINESCENCE; TRAPPING

Citation Formats

Kitaura, M., E-mail: kitaura@sci.kj.yamagata-u.ac.jp, Sato, A., Ohnishi, A., Sasaki, M., and Kamada, K. Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy. United States: N. p., 2014. Web. doi:10.1063/1.4867315.
Kitaura, M., E-mail: kitaura@sci.kj.yamagata-u.ac.jp, Sato, A., Ohnishi, A., Sasaki, M., & Kamada, K. Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy. United States. https://doi.org/10.1063/1.4867315
Kitaura, M., E-mail: kitaura@sci.kj.yamagata-u.ac.jp, Sato, A., Ohnishi, A., Sasaki, M., and Kamada, K. 2014. "Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy". United States. https://doi.org/10.1063/1.4867315.
@article{osti_22277962,
title = {Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy},
author = {Kitaura, M., E-mail: kitaura@sci.kj.yamagata-u.ac.jp and Sato, A. and Ohnishi, A. and Sasaki, M. and Kamada, K.},
abstractNote = {Photoluminescence (PL) and thermally stimulated luminescence (TSL) properties of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} (Ce:GAGG) crystals have been studied in the temperature range of 10–300 K under electron excitation from the 4f level to the 5d levels of Ce{sup 3+} ions. PL and TSL spectra commonly exhibit a prominent band around 2.31 eV, due to electron transitions from the lowest 5d (5d{sub 1}) level to the 4f levels. The intensity of the Ce{sup 3+} PL band is significantly changed with temperature under excitation from the lowest 4f level to a higher-lying 5d (5d{sub 2}) level, whereas it is scarcely changed under excitation from the 4f level to the 5d{sub 1} level. Such change correlates well with the appearance of TSL glow peaks at 84 and 175 K. The luminescence properties are apparently influenced by the thermal behavior of electrons trapped at some lattice site, but not by nonradiative processes of electrons starting from the 5d{sub 1} level. The phosphorescence process will be discussed using a phenomenological model based on the results obtained.},
doi = {10.1063/1.4867315},
url = {https://www.osti.gov/biblio/22277962}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 115,
place = {United States},
year = {Fri Feb 28 00:00:00 EST 2014},
month = {Fri Feb 28 00:00:00 EST 2014}
}