Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors

Journal Article · Fri Mar 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4866597· OSTI ID:22277919

Tokumitsu, E.; Shimoda, T. ^[1]; Miyasako, T. ^[2]

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1. ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, 2-13 Asahidai, Nomi, Ishikawa 923-1211 (Japan)
2. Yokkaichi Research Center, JSR Corporation, Yokkaichi 510-8552 (Japan)

Surface potentials of an operating In-Sn-O channel ferroelectric-gate transistor (FGT) were mapped by Kelvin probe force microscopy. We clearly observed a gradual transition within the channel from linear potential profile to superlinear ones when drain voltage approaches and overcomes gate voltage, which is related to the physics of electronic transport under field-effect doping. The dependence of field-effect mobility on gate-bias and lateral field, as well as the effect of source/drain electrode materials on transport properties, was also elucidated. This study provides useful information for optimizing the FGT performance and for understanding its underlying physics.

• OSTI ID: 22277919
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
ELECTRIC POTENTIAL
FERROELECTRIC MATERIALS
INDIUM
INDIUM COMPOUNDS
MICROSCOPY
OPTIMIZATION
PERFORMANCE
PROBES
SURFACE POTENTIAL
THIN FILMS
TIN
TIN OXIDES
TRANSISTORS