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Title: Optimization of magneto-resistive response of ion-irradiated exchange biased films through zigzag arrangement of magnetization

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4867742· OSTI ID:22277917
; ;  [1]; ;  [2];  [3];  [4]
  1. Institute for Material Science, Kiel University, Kaiserstr. 2, 24143 Kiel (Germany)
  2. Institute for Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)
  3. Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany)
  4. Institute of Photonic Technology IPHT Jena, A.-Einstein-Str. 9, 07754 Jena (Germany)

Exchange coupled ferromagnetic-antiferromagnetic Ni{sub 81}Fe{sub 19}/Ir{sub 23}Mn{sub 77} films with a zigzag alignment of magnetization are prepared by local ion irradiation. The anisotropic magneto-resistive behavior of the magnetic thin film structures is correlated to the magnetic structure and modeled. A unique uniaxial field sensitivity along the net magnetization alignment is obtained through the orthogonally modulated and magnetic domain wall stabilized magnetic ground state. Controlling local thin film magnetization distributions and, thus, the overall magnetization response opens unique ways to tailor the magneto-resistive sensitivity of functional magnetic thin film devices.

OSTI ID:
22277917
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English