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Title: Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}

Abstract

Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

Authors:
;  [1];  [2];  [3];  [4];  [5]
  1. Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, Saskatchewan S7N 5E2 (Canada)
  2. Department of Electrophysics, Institute of Physics and Technology, Ural Federal University, 19 Mira Str., 620002 Yekaterinburg (Russian Federation)
  3. Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg (Russian Federation)
  4. Institute of Electrophysics, Russian Academy of Sciences-Ural Division, 620016 Yekaterinburg (Russian Federation)
  5. Institute of Physics and Technology, Ural Federal University, 19 Mira Str., 620002 Yekaterinburg (Russian Federation)
Publication Date:
OSTI Identifier:
22277871
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT IONS; COBALT OXIDES; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; COVALENCE; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; INTERSTITIALS; LUMINESCENCE; MANGANESE IONS; MANGANESE OXIDES; OXYGEN; SILICON OXIDES

Citation Formats

Green, R. J., E-mail: robert.green@usask.ca, St Onge, D. J., Moewes, A., Zatsepin, D. A., Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg, Kurmaev, E. Z., Gavrilov, N. V., and Zatsepin, A. F. Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}. United States: N. p., 2014. Web. doi:10.1063/1.4868297.
Green, R. J., E-mail: robert.green@usask.ca, St Onge, D. J., Moewes, A., Zatsepin, D. A., Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg, Kurmaev, E. Z., Gavrilov, N. V., & Zatsepin, A. F. Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}. United States. https://doi.org/10.1063/1.4868297
Green, R. J., E-mail: robert.green@usask.ca, St Onge, D. J., Moewes, A., Zatsepin, D. A., Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg, Kurmaev, E. Z., Gavrilov, N. V., and Zatsepin, A. F. 2014. "Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}". United States. https://doi.org/10.1063/1.4868297.
@article{osti_22277871,
title = {Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}},
author = {Green, R. J., E-mail: robert.green@usask.ca and St Onge, D. J. and Moewes, A. and Zatsepin, D. A. and Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg and Kurmaev, E. Z. and Gavrilov, N. V. and Zatsepin, A. F.},
abstractNote = {Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.},
doi = {10.1063/1.4868297},
url = {https://www.osti.gov/biblio/22277871}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 115,
place = {United States},
year = {Fri Mar 14 00:00:00 EDT 2014},
month = {Fri Mar 14 00:00:00 EDT 2014}
}