Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
- HexaTech, Inc., 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560 (United States)
- Engineering Science Directorate, Army Research Office, P.O. BOX 12211, Research Triangle Park, North Carolina 27703 (United States)
Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.
- OSTI ID:
- 22277867
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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