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Title: Crystal structure of Si-doped HfO{sub 2}

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4861733· OSTI ID:22275782
 [1]; ;  [1];  [2]; ; ;  [3];  [4]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  3. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  4. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

OSTI ID:
22275782
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

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