Temperature dependence of the transverse piezoelectric coefficient of thin films and aging effects
- IBM Research—Zurich, CH-8803 Rüschlikon (Switzerland)
- CEA-LETI, Minatec, 17 rue des Martyrs, F-38054 Grenoble (France)
We present a technique to measure the temperature dependence of the transverse piezoelectric coefficient e{sub 31,f} of thin films of lead zirconate titanate (PZT), aluminum nitride, and BaTiO{sub 3} deposited on Si wafers. It is based on the collection of electric charges induced by the deflection of a Si cantilever coated with the piezoelectric film. The aim of this work is to assess the role of temperature in the decay of the remnant polarization of these materials, in particular, in optimized gradient-free PZT with composition PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}. It is found that in contrast to theoretical predictions, e{sub 31,f} decreases with temperature because of the dominance of relaxation effects. The observation of steps in the logarithmic aging decay law is reminiscent of memory effects seen in frustrated spin glasses.
- OSTI ID:
- 22275751
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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