Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862275· OSTI ID:22275733

Lin, Meng-Yu ^[1]; Chen, Yen-Hao ^[2]; Su, Chen-Fung ^[3]; Chang, Shu-Wei ^[4]; Lee, Si-Chen ^[1]; Lin, Shih-Yen ^[1]

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1. Institute of Electronics, National Taiwan University, Taipei 10617, Taiwan (China)
2. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
3. College of Photonics, National Chiao Tung University, Tainan 71150, Taiwan (China)
4. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)

We investigate the electronic properties of p-type graphene transistors on silicon dioxide with dual-cut channels that were scraped using atomic force microscope tips. In these devices, the current is forced to squeeze into the path between the two cuts rather than flow directly through the graphene sheet. We observe that the gate voltages with minimum current shift toward zero bias as the sizes of the dual-cut regions increase. These phenomena suggest that the Fermi levels in the dual-cut regions are shifted toward the Dirac points after the mechanical scraping process.

• OSTI ID: 22275733
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
FERMI LEVEL
GRAPHENE
SILICON OXIDES
TRANSISTORS