Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

Journal Article · Tue Jan 21 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4862405· OSTI ID:22275710

Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek; Rodwell, Mark J. W. ^[1]

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1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

• OSTI ID: 22275710
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
DIFFUSION
ELECTRIC CURRENTS
GAIN
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
THZ RANGE
TRANSISTORS