Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes
- Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)
We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500 nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75 nA/cm{sup 2} and 0.035%, respectively, at 352 nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.
- OSTI ID:
- 22275703
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
CAPACITORS
DEPOLARIZATION
DEPOSITION
ELECTRIC FIELDS
ENERGY CONVERSION
FERROELECTRIC MATERIALS
LAYERS
PHOTOVOLTAIC EFFECT
PLATINUM
POTASSIUM COMPOUNDS
SILICON
SILICON OXIDES
SODIUM COMPOUNDS
SUBSTRATES
THIN FILMS
TIN OXIDES
TITANATES
TITANIUM OXIDES