Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

Journal Article · Tue Jan 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4862958· OSTI ID:22275642

Mohanta, Antaryami; Jang, Der-Jun; Wang, Ming-Sung; Tu, L. W. ^[1]

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1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)

Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recombination; whereas PL spectra at higher temperatures above 150 K are characterized by both “band-to-band” and “free-to-bound” transition. Carrier dynamics of Si doped InN thin films is studied using pump-probe reflection spectroscopy at room temperature. The hot electron cooling process is well described by electron-electron scattering. The dependence of the hot electron cooling rate on total electron density shows sublinear to linear behavior with increase of background electron density. The variation of the carrier recombination lifetime with total electron density implicates the dominance of the defect-related nonradiative recombination channel over other recombination processes.

• OSTI ID: 22275642
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
DOPED MATERIALS
ELECTRON COOLING
ELECTRON DENSITY
EMISSION SPECTRA
EMISSION SPECTROSCOPY
EXCITATION
INDIUM NITRIDES
PHOTOLUMINESCENCE
RECOMBINATION
SILICON COMPOUNDS
SPECTRAL REFLECTANCE
TEMPERATURE DEPENDENCE
THIN FILMS