1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure

Journal Article · Tue Jan 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4863121· OSTI ID:22275638

Aleshkin, V. Ya.; Kudryavtsev, K. E.; Rumyantsev, V. V. ^[1]; Tonkikh, A. A. ^[1]; Zakharov, N. D. ^[2]; Zvonkov, B. N. ^[3]

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1. Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation)
2. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany)
3. The NNSU Physical-Technical Research Institute, Nizhny Novgorod 603950 (Russian Federation)

In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3 μm at room temperature. We attribute this peak to the direct band gap transitions between Γ-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

• OSTI ID: 22275638
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY GAP
GALLIUM ARSENIDES
GERMANIUM
HETEROJUNCTIONS
HOLES
LASER RADIATION
PHOTOLUMINESCENCE
QUANTUM WELLS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
VALENCE