Coexistence of superconductivity and commensurate charge density wave in 4H{sub b}-TaS{sub 2−x}Se{sub x} single crystals
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
The transition-metal dichalcogenides, a family of graphene-like two-dimensional (2D) materials, exhibit exciting properties for potential applications and fundamental researches. We successfully fabricated a new series of 4H{sub b}-TaS{sub 2−x}Se{sub x} (0 ≤ x ≤ 1.5) single crystals by chemical vapor transport technique. This is the first time to demonstrate the coexistence of superconductivity and commensurate charge density wave (CCDW) in 4H{sub b}-TaS{sub 2−x}Se{sub x} (0 ≤ x ≤ 1.5). The evolution of the electronic states tuned by Se-doping are also exhibited in the phase diagram. Taking into account the special crystal structure of 4H{sub b}-TaS{sub 2−x}Se{sub x} (0 ≤ x ≤ 1.5), we draw a conclusion that the H- and T-layers play a crucial role to dominate the state of superconductivity and CCDW, respectively.
- OSTI ID:
- 22275630
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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