Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

Journal Article · Tue Jan 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4863398· OSTI ID:22275615

Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P. ^[1]; Petrisor, T. ^[2]; Tiusan, C. ^[2]

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1. LSPM (CNRS-UPR 3407), 99 avenue Jean-Baptiste Clément, Université Paris 13, 93430 Villetaneuse (France)
2. Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania)

10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

• OSTI ID: 22275615
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANISOTROPY
ANNEALING
COBALT
CRYSTAL STRUCTURE
EPITAXY
FERROMAGNETIC RESONANCE
FLEXIBILITY
HEUSLER ALLOYS
INTERMETALLIC COMPOUNDS
IRON
MAGNESIUM OXIDES
POLYCRYSTALS
SILICON
SPUTTERING
SUBSTRATES
THICKNESS
THIN FILMS
X-RAY DIFFRACTION