Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

Journal Article · Tue Jan 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4863332· OSTI ID:22275612

Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel

The optimization of heavily strained Ga{sub 0.25}In{sub 0.75}As/Al{sub 0.48}In{sub 0.52}As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm{sup 2}/Vs and 70 000 cm{sup 2}/Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10{sup 12} cm{sup −2} throughout the entire study.

• OSTI ID: 22275612
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CARRIER DENSITY
CHARGE CARRIERS
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INTERFACES
LAYERS
OPTIMIZATION
STRAINS
TRANSISTORS