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Title: Phase transformation between Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) compounds formed on single crystalline Cu substrate during solid state aging

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4863336· OSTI ID:22275609
; ;  [1]
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

Interfacial reactions between eutectic SnIn and single crystalline Cu during solid-state aging at low temperature were investigated systematically. Three types of phase transformations between Cu(In,Sn){sub 2} layer and Cu{sub 2}(In,Sn) layer were observed, which are Cu(In,Sn){sub 2} grows and Cu{sub 2}(In,Sn) consumes at 40 °C, Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) grow simultaneously at 60 °C, as well as Cu(In,Sn){sub 2} consumes and Cu{sub 2}(In,Sn) grows at 80 and 100 °C. According to physicochemical approach, the chemical reactions at Cu/Cu{sub 2}(In,Sn)/Cu(In,Sn){sub 2}/SnIn interfaces were discussed in detail. It was concluded that the diffusion ability of Cu and In atoms dominated different phase transformations. When diffusion constants k{sub 1In2} > 8/3k{sub 1Cu2} Cu(In,Sn){sub 2} will grow, and if k{sub 1Cu2} ≫ k{sub 1In2} Cu{sub 2}(In,Sn) will grow. Both Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) can grow in the condition of k{sub 1In2} ≈ k{sub 1Cu2}. The values of k{sub 1Cu2} and k{sub 1In2} at different temperatures on (100)Cu and (111)Cu substrate were also calculated or estimated by analyzing the growth kinetics of the compound layers.

OSTI ID:
22275609
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English