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Title: High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors

Abstract

The generation of a photocurrent from two-dimensional tungsten disulfide (WS{sub 2}) field-effect transistors is examined here, and its dependence on the photon energy is characterized. We found from the WS{sub 2} devices that a significant enhancement in the ratio of illuminated current against dark current (I{sub illum}/I{sub dark}) of ∼10{sup 2}–10{sup 3} is attained, even with the application of electric fields of E{sub D} = 0.02 and E{sub G} = −22 mV/nm, which are much smaller than that of the bulk MoS{sub 2} phototransistor. Most importantly, we demonstrate that our multilayer WS{sub 2} shows an extremely high external quantum efficiency of ∼7000%, even with the smallest electrical field applied. We also found that photons with an energy near the direct band gap of the bulk WS{sub 2}, in the range of 1.9–2.34 eV, give rise to a photoresponsivity of ∼0.27 A/W, which exceeds the photoresponsivity of the bulk MoS{sub 2} phototransistor. The superior photosensing properties of WS{sub 2} demonstrated in this work are expected to be utilized in the development of future high performance two-dimensional optoelectronic devices.

Authors:
; ;  [1];  [2]
  1. Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), 2066 Seobu-ro, Suwon-si, Gyeonggi-do 440-746 (Korea, Republic of)
  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
22275530
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; FIELD EFFECT TRANSISTORS; MOLYBDENUM SULFIDES; PHOTONS; QUANTUM EFFICIENCY; TUNGSTEN SULFIDES

Citation Formats

Hwan Lee, Seung, Lee, Daeyeong, Jong Yoo, Won, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Samsung-SKKU Graphene Center, Sik Hwang, Wan, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Hwang, Euyheon, and Jena, Debdeep. High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors. United States: N. p., 2014. Web. doi:10.1063/1.4878335.
Hwan Lee, Seung, Lee, Daeyeong, Jong Yoo, Won, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Samsung-SKKU Graphene Center, Sik Hwang, Wan, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Hwang, Euyheon, & Jena, Debdeep. High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors. United States. https://doi.org/10.1063/1.4878335
Hwan Lee, Seung, Lee, Daeyeong, Jong Yoo, Won, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Samsung-SKKU Graphene Center, Sik Hwang, Wan, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu, Hwang, Euyheon, and Jena, Debdeep. 2014. "High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors". United States. https://doi.org/10.1063/1.4878335.
@article{osti_22275530,
title = {High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors},
author = {Hwan Lee, Seung and Lee, Daeyeong and Jong Yoo, Won, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu and Samsung-SKKU Graphene Center and Sik Hwang, Wan, E-mail: whwang@kau.ac.kr, E-mail: yoowj@skku.edu and Hwang, Euyheon and Jena, Debdeep},
abstractNote = {The generation of a photocurrent from two-dimensional tungsten disulfide (WS{sub 2}) field-effect transistors is examined here, and its dependence on the photon energy is characterized. We found from the WS{sub 2} devices that a significant enhancement in the ratio of illuminated current against dark current (I{sub illum}/I{sub dark}) of ∼10{sup 2}–10{sup 3} is attained, even with the application of electric fields of E{sub D} = 0.02 and E{sub G} = −22 mV/nm, which are much smaller than that of the bulk MoS{sub 2} phototransistor. Most importantly, we demonstrate that our multilayer WS{sub 2} shows an extremely high external quantum efficiency of ∼7000%, even with the smallest electrical field applied. We also found that photons with an energy near the direct band gap of the bulk WS{sub 2}, in the range of 1.9–2.34 eV, give rise to a photoresponsivity of ∼0.27 A/W, which exceeds the photoresponsivity of the bulk MoS{sub 2} phototransistor. The superior photosensing properties of WS{sub 2} demonstrated in this work are expected to be utilized in the development of future high performance two-dimensional optoelectronic devices.},
doi = {10.1063/1.4878335},
url = {https://www.osti.gov/biblio/22275530}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 104,
place = {United States},
year = {Mon May 12 00:00:00 EDT 2014},
month = {Mon May 12 00:00:00 EDT 2014}
}