Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

Journal Article · Wed May 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4876487· OSTI ID:22275521

Elmasry, F. ^[1]; Okubo, S. ^[2]; Fujiwara, Y. ^[3]

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1. Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan)
2. Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan)
3. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

Er-concentration effect in GaAs;Er,O containing charge carriers (n-type, high resistance, p-type) has been studied by X-band Electron spin resonance (ESR) at low temperature (4.7 K < T < 18 K). Observed A, B, and C types of ESR signals were identical to those observed previously in GaAs:Er,O without carrier. The local structure around Er-2O centers is not affected by carriers because similar angular dependence of g-values was observed in both cases (with/without carrier). For temperature dependence, linewidth and lineshape analysis suggested the existence of Er dimers with antiferromagnetic exchange interaction of about 7 K. Moreover, drastic decrease of ESR intensity for C signal in p-type sample was observed and it correlates with the decrease of photoluminescence (PL) intensity. Possible model for the Er-2O trap level in GaAs:Er,O is discussed from the ESR and PL experimental results.

• OSTI ID: 22275521
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
CHARGE CARRIERS
CONCENTRATION RATIO
DIMERS
ELECTRIC CONDUCTIVITY
ELECTRON SPIN RESONANCE
ERBIUM COMPOUNDS
EXCHANGE INTERACTIONS
G VALUE
GALLIUM ARSENIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
TEMPERATURE DEPENDENCE
TRAPS