KSi{sub 2}P{sub 3}: A new layered phosphidopolysilicate (IV)
- Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
A new ternary phosphidopolysilicate (IV), KSi{sub 2}P{sub 3}, has been synthesized by high temperature solid state reaction. The compound crystallizes in a new structure type in the monoclinic space group C2/c with a=10.1327(5) Å, b=10.1382(5) Å, c=21.1181(10) Å, β=96.88(0)°, and Z=8. In the structure, all SiP{sub 4} tetrahedra are connected with each other by corner-sharing P atoms to form {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −} layers, which are stacked along c direction and separated by K{sup +} cations. The two-dimensional structure of KSi{sub 2}P{sub 3} contrasts with those of the two known members in the ternary A/Si/P (A=alkali metal) system, namely Na{sub 5}SiP{sub 3} (zero-dimensional) and K{sub 2}SiP{sub 2} (one-dimensional), which contains less amount of Si. The band gap deduced from UV–vis–IR diffuse reflectance spectrum is 1.72 eV. - Graphical abstract: KSi{sub 2}P{sub 3} contains two-dimensional layer {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −} separated by K{sup +} cations. Display Omitted - Highlights: • A new ternary phosphidopolysilicate (IV), KSi{sub 2}P{sub 3}, has been synthesized. • The SiP{sub 4} tetrahedra are connected to form two-dimensional layer {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −}. • The two-dimensional layers are separated by K{sup +} cations. • KSi{sub 2}P{sub 3} is a semiconductor with band gap of 1.72 eV.
- OSTI ID:
- 22274080
- Journal Information:
- Journal of Solid State Chemistry, Vol. 205; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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