Spin injection and diffusion in silicon based devices from a space charge layer

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4856056· OSTI ID:22273928

Ghosh, Joydeep; Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried ^[1]

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1. Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A–1040 Wien (Austria)

We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained.

• OSTI ID: 22273928
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
DEPLETION LAYER
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRONS
N-TYPE CONDUCTORS
SILICON
SPIN