Field-current phase diagrams of in-plane spin transfer torque memory cells with low effective magnetization storage layers
- SPINTEC, UMR(8191) CEA/CNRS/UJF/Grenoble INP, INAC, 17 rue des Martyrs, 38054 Grenoble (France)
- Applied Materials SGG CTO, Les Jardins d'Entreprise 11b, Chemin de la Dhuy 38246 Meylan Cedex (France)
- Applied Materials SSG CTO, 974 E Arques avenue, Sunnyvale, California 94085 (United States)
Field-current phase diagrams were measured on in-plane anisotropy Co{sub 60}Fe{sub 20}B{sub 20} magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutive pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm{sup 2}, compared to the lower 3.4 MA/cm{sup 2} value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence.
- OSTI ID:
- 22273874
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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