Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4865464· OSTI ID:22273821

Gopman, D. B.; Rehm, L.; Backes, D.; Wolf, G.; Kent, A. D. ^[1]; Ohki, T. ^[2]; Kirichenko, A. F.; Vernik, I. V.; Mukhanov, O. A. ^[3]

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1. Department of Physics, New York University, New York, New York 10003 (United States)
2. Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)
3. HYPRES, 175 Clearbrook Road, Elmsford, New York 10523 (United States)

We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

• OSTI ID: 22273821
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CURRENTS
MAGNETIZATION
POLARIZATION
PULSES
SPIN
TEMPERATURE DEPENDENCE
VALVES