An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4865771· OSTI ID:22273815

Roldán, J. B. ^[1]; Reig, C. ^[2]; Cardoso, S. ^[3]; Cardoso, F. ^[3]; Ferreira, R. ^[4]; Freitas, P. P. ^[3]

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1. Department of Electronics and Computer Technology, University of Granada (Spain)
2. Department of Electronic Engineering, University of Valencia (Spain)
3. INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal)
4. International Iberian Nanotechnology Laboratory, Braga (Portugal)

Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal–oxide–semiconductor modules.

• OSTI ID: 22273815
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CURRENTS
HETEROJUNCTIONS
MAGNETORESISTANCE
METALS
NOISE
OXIDES
SEMICONDUCTOR MATERIALS
SENSORS
SIMULATORS
SPIN
TUNNEL EFFECT
VALVES