Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current
Abstract
This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.
- Authors:
-
- Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan)
- Research Institute of Electrical Communication, Tohoku University, Sendai (Japan)
- Publication Date:
- OSTI Identifier:
- 22273721
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; CRITICAL CURRENT; DIFFERENTIAL EQUATIONS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; IRRADIATION; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SILICON; SIMULATORS; SURFACES; TUNNEL EFFECT; WAVE FORMS
Citation Formats
Sakimura, N., E-mail: n-sakimura@ap.jp.nec.com, Research Institute of Electrical Communication, Tohoku University, Sendai, Nebashi, R., Sugibayashi, T., Natsui, M., Hanyu, T., Ohno, H., Center for Spintronics Integrated Systems, Tohoku University, Sendai, and WPI Advanced Institute for Materials Research, Tohoku University, Sendai. Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current. United States: N. p., 2014.
Web. doi:10.1063/1.4869287.
Sakimura, N., E-mail: n-sakimura@ap.jp.nec.com, Research Institute of Electrical Communication, Tohoku University, Sendai, Nebashi, R., Sugibayashi, T., Natsui, M., Hanyu, T., Ohno, H., Center for Spintronics Integrated Systems, Tohoku University, Sendai, & WPI Advanced Institute for Materials Research, Tohoku University, Sendai. Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current. United States. https://doi.org/10.1063/1.4869287
Sakimura, N., E-mail: n-sakimura@ap.jp.nec.com, Research Institute of Electrical Communication, Tohoku University, Sendai, Nebashi, R., Sugibayashi, T., Natsui, M., Hanyu, T., Ohno, H., Center for Spintronics Integrated Systems, Tohoku University, Sendai, and WPI Advanced Institute for Materials Research, Tohoku University, Sendai. 2014.
"Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current". United States. https://doi.org/10.1063/1.4869287.
@article{osti_22273721,
title = {Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current},
author = {Sakimura, N., E-mail: n-sakimura@ap.jp.nec.com and Research Institute of Electrical Communication, Tohoku University, Sendai and Nebashi, R. and Sugibayashi, T. and Natsui, M. and Hanyu, T. and Ohno, H. and Center for Spintronics Integrated Systems, Tohoku University, Sendai and WPI Advanced Institute for Materials Research, Tohoku University, Sendai},
abstractNote = {This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.},
doi = {10.1063/1.4869287},
url = {https://www.osti.gov/biblio/22273721},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 115,
place = {United States},
year = {Wed May 07 00:00:00 EDT 2014},
month = {Wed May 07 00:00:00 EDT 2014}
}