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Title: Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf{sub 0.6}La{sub 0.4}O{sub x} films

One of the major challenges in realizing the GaAs channel in the metal oxide semiconductor field effect transistor is the degrading in electron transport properties at the interface between GaAs and the gate oxide. In this study, Hf{sub 0.6}La{sub 0.4}O{sub x} gate oxide films were deposited at a low temperature (200 °C) on GaAs(111)A and GaAs(100) substrates by plasma enhanced atomic layer deposition. Microstructure analysis indicates that residuals of gallium oxide, arsenic oxide, and As element remained at the interface of Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(100). On contrast, a smoother interface is observed between Hf{sub 0.6}La{sub 0.4}O{sub x} thin film and GaAs(111)A substrate. Furthermore, a reduction of interfacial layer is observed in Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(111)A. Electrical characterization of the metal-insulator-semiconductor Pt/Hf{sub 0.6}La{sub 0.4}O{sub x}/n-GaAs(111)A capacitor indicated a reduction of D{sub it} and leakage current compared with the capacitor fabricated on GaAs(100)
Authors:
;  [1] ;  [2] ; ;  [3] ; ;  [4]
  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi Road 1295, Shanghai 200050 (China)
  3. Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500 (Australia)
  4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22273699
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC OXIDES; CAPACITORS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; GALLIUM OXIDES; HAFNIUM COMPOUNDS; INTERFACES; LANTHANUM OXIDES; LAYERS; LEAKAGE CURRENT; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS