Quantitative comparison between Z{sub 1∕2} center and carbon vacancy in 4H-SiC
- Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
- Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)
In this study, to reveal the origin of the Z{sub 1∕2} center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z{sub 1∕2} center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z{sub 1∕2} concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V{sub C}) measured by EPR under light illumination can well be explained with the Z{sub 1∕2} concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z{sub 1∕2} center originates from a single V{sub C}.
- OSTI ID:
- 22273637
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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