Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?
In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
- School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States)
- Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland)
- Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)
- Publication Date:
- OSTI Identifier:
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
- Country of Publication:
- United States
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRON CYCLOTRON-RESONANCE; EMISSION SPECTROSCOPY; EXCITATION; INFRARED SPECTRA; MATRIX MATERIALS; NANOSTRUCTURES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE; TERBIUM IONS; THIN FILMS; TIME RESOLUTION