Preventing light-induced degradation in multicrystalline silicon
Journal Article
·
· Journal of Applied Physics
- Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)
Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.
- OSTI ID:
- 22273587
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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