Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Oshima, Yuichi; Víllora, Encarnación G.; Shimamura, Kiyoshi

doi:10.1063/1.4871656

Title: Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

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Abstract

The heteroepitaxial growth of ScN films was investigated on various substrates by hydride vapor phase epitaxy (HVPE). Single crystalline mirror-like ScN(100) and ScN(110) layers were successfully deposited on r- and m-plane sapphire substrates, respectively. Homogeneous stoichiometric films (N/Sc ratio 1.01 ± 0.10) up to 40 μm in thickness were deposited. Their mosaicity drastically improved with increasing the film thickness. The band gap was determined by optical methods to be 2.06 eV. Impurity concentrations including H, C, O, Si, and Cl were investigated through energy dispersive X-ray spectrometry and secondary ion mass spectrometry. As a result, it was found that the presence of impurities was efficiently suppressed in comparison with that of HVPE-grown ScN films reported in the past, which was possible thanks to the home-designed corrosion-free HVPE reactor. Room-temperature Hall measurements indicated that the residual free electron concentrations ranged between 10{sup 18}–10{sup 20} cm{sup −3}, which was markedly lower than the reported values. The carrier mobility increased monotonically with the decreasing in carrier concentration, achieving the largest value ever reported, 284 cm{sup 2} V{sup −1} s{sup −1} at n = 3.7 × 10{sup 18} cm{sup −3}.

Authors:

Oshima, Yuichi; Víllora, Encarnación G.; Shimamura, Kiyoshi ^[1]

Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Publication Date:: Mon Apr 21 00:00:00 EDT 2014

OSTI Identifier:: 22273555

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRONS; HALL EFFECT; HYDRIDES; LAYERS; MASS SPECTROSCOPY; MONOCRYSTALS; SAPPHIRE; SCANDIUM NITRIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VAPOR PHASE EPITAXY; X-RAY SPECTROSCOPY

Citation Formats


                    Oshima, Yuichi, Víllora, Encarnación G., and Shimamura, Kiyoshi. Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4871656.

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                    Oshima, Yuichi, Víllora, Encarnación G., & Shimamura, Kiyoshi. Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers.  United States.  https://doi.org/10.1063/1.4871656

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                    Oshima, Yuichi, Víllora, Encarnación G., and Shimamura, Kiyoshi. 2014.  
        "Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers".  United States.  https://doi.org/10.1063/1.4871656.

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@article{osti_22273555,

  title        = {Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers},

  author       = {Oshima, Yuichi and Víllora, Encarnación G. and Shimamura, Kiyoshi},

  abstractNote = {The heteroepitaxial growth of ScN films was investigated on various substrates by hydride vapor phase epitaxy (HVPE). Single crystalline mirror-like ScN(100) and ScN(110) layers were successfully deposited on r- and m-plane sapphire substrates, respectively. Homogeneous stoichiometric films (N/Sc ratio 1.01 ± 0.10) up to 40 μm in thickness were deposited. Their mosaicity drastically improved with increasing the film thickness. The band gap was determined by optical methods to be 2.06 eV. Impurity concentrations including H, C, O, Si, and Cl were investigated through energy dispersive X-ray spectrometry and secondary ion mass spectrometry. As a result, it was found that the presence of impurities was efficiently suppressed in comparison with that of HVPE-grown ScN films reported in the past, which was possible thanks to the home-designed corrosion-free HVPE reactor. Room-temperature Hall measurements indicated that the residual free electron concentrations ranged between 10{sup 18}–10{sup 20} cm{sup −3}, which was markedly lower than the reported values. The carrier mobility increased monotonically with the decreasing in carrier concentration, achieving the largest value ever reported, 284 cm{sup 2} V{sup −1} s{sup −1} at n = 3.7 × 10{sup 18} cm{sup −3}.},

  doi          = {10.1063/1.4871656},

  url          = {https://www.osti.gov/biblio/22273555},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 15,

  volume       = 115,

  place        = {United States},

  year         = {Mon Apr 21 00:00:00 EDT 2014},

  month        = {Mon Apr 21 00:00:00 EDT 2014}

}

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