Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
Journal Article
·
· Journal of Applied Physics
- A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
- P. Sahaydachnyi Army Academy, Lviv 79012 (Ukraine)
- Center of Microelectronics and Nanotechnology, Rzeszów University, Rzeszów 35-310 (Poland)
- National Research Tomsk State University, Tomsk 634050 (Russian Federation)
A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.
- OSTI ID:
- 22273533
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical properties of intrinsic p-type shallow levels in HgCdTe grown by molecular-beam epitaxy in the (111)B orientation
Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films
Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment
Journal Article
·
Wed Mar 01 00:00:00 EST 1989
· J. Vac. Sci. Technol., A; (United States)
·
OSTI ID:22273533
+2 more
Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films
Journal Article
·
Thu Feb 15 00:00:00 EST 2018
· Russian Physics Journal
·
OSTI ID:22273533
Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment
Journal Article
·
Thu Sep 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:22273533
+3 more