Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4873975· OSTI ID:22273509

Du, Jiangfeng; Yan, Hui; Yin, Chenggong; Yu, Qi ^[1]; Feng, Zhihong; Dun, Shaobo ^[2]

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1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
2. Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)

A gate length of 0.2 μm InAlN/GaN high electron mobility transistor on SiC substrate is obtained with a maximum current gain cutoff frequency (f{sub T}) of 65.8 GHz and a maximum power gain cutoff frequency (f{sub max}) of 143.6 GHz. Lombardi model, which takes interface roughness scattering into consideration, has been introduced to model the transconductance (g{sub m}) degradation. The simulated g{sub m} and f{sub T} with Lombardi model are 69% and 58% lower than the ones without considering interface roughness scattering, respectively. Further analysis show experimental g{sub m}, gate capacitance (C{sub g}), and f{sub T} are consistent with results based on Lombardi model.

• OSTI ID: 22273509
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CAPACITANCE
COMPUTERIZED SIMULATION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRON MOBILITY
GAIN
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
ROUGHNESS
SILICON CARBIDES
SUBSTRATES
TRANSISTORS