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Title: Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds

Abstract

CuIn{sub 1−x}Cd{sub x}Te{sub 2} materials (x = 0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600 K.

Authors:
 [1];  [1];  [2];  [1]
  1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
  2. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22273505
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM COMPOUNDS; CARRIER MOBILITY; CONCENTRATION RATIO; COPPER COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FLUCTUATIONS; INDIUM TELLURIDES; MELTING; PHONONS; POWER FACTOR; SINTERING; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION

Citation Formats

Cheng, N., CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, Liu, R., Bai, S., Shi, X., E-mail: xshi@mail.sic.ac.cn, Chen, L., and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds. United States: N. p., 2014. Web. doi:10.1063/1.4872250.
Cheng, N., CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, Liu, R., Bai, S., Shi, X., E-mail: xshi@mail.sic.ac.cn, Chen, L., & CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds. United States. https://doi.org/10.1063/1.4872250
Cheng, N., CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, Liu, R., Bai, S., Shi, X., E-mail: xshi@mail.sic.ac.cn, Chen, L., and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050. 2014. "Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds". United States. https://doi.org/10.1063/1.4872250.
@article{osti_22273505,
title = {Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds},
author = {Cheng, N. and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 and University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 and Liu, R. and Bai, S. and Shi, X., E-mail: xshi@mail.sic.ac.cn and Chen, L. and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050},
abstractNote = {CuIn{sub 1−x}Cd{sub x}Te{sub 2} materials (x = 0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600 K.},
doi = {10.1063/1.4872250},
url = {https://www.osti.gov/biblio/22273505}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 115,
place = {United States},
year = {Mon Apr 28 00:00:00 EDT 2014},
month = {Mon Apr 28 00:00:00 EDT 2014}
}