Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4874218· OSTI ID:22273491

Burobina, V. ^[1]; Binek, Ch. ^[2]

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1. Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112-0830 (United States)
2. Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, Nebraska 68588-0299 (United States)

We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10{sup 17} cm{sup −3}. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.

• OSTI ID: 22273491
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANALYTICAL SOLUTION
APPROXIMATIONS
CHARGE CARRIERS
CONCENTRATION RATIO
ELECTRONS
EXCITATION
GALLIUM ARSENIDES
KINETIC EQUATIONS
MAGNETIC SEMICONDUCTORS
OPTICAL PUMPING
RELAXATION TIME
SPIN