Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range
- Institut d'Électronique, Microélectronique et Nanotechnologie, UMR-CNRS 8520, PRES Université Lille Nord de France, Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d'Ascq Cedex (France)
- Fonctions Optiques pour les Technologies de l'informatiON, UMR-CNRS 6082, ENSSAT 6, rue de Kerampont, CS 80518, 22305 Lannion Cedex (France)
- Laboratoire de Microélectronique, Université Djilali Liabes, 22000 Sidi Bel Abbes (Algeria)
- Institut Universitaire Technologique Industriel, Université de Djibouti, Avenue Georges Clémenceau, BP 1904 Djibouti (Djibouti)
- Institute of Physics of Academy of Sciences of Czech Republic, Fyzikální ústav AV CR, v.v.i., Na Slovance 1999/2 (Czech Republic)
- Solar Terrestrial Center of Excellence, Royal Observatory of Belgium, Circular 3, B-1180 Brussels (Belgium)
Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450–1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films.
- OSTI ID:
- 22273488
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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