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Title: Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

Abstract

The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility ofmore » defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.« less

Authors:
; ; ; ; ; ;  [1]
  1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22273461
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ANTIMONY; ATOMS; CAPACITANCE; COMPARATIVE EVALUATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ENERGY LEVELS; HYDROGEN; PASSIVATION; SUBSTRATES; TIN; VACANCIES; VALENCE

Citation Formats

Taoka, Noriyuki, Fukudome, Motoshi, Takeuchi, Wakana, Arahira, Takamitsu, Sakashita, Mitsuo, Nakatsuka, Osamu, and Zaima, Shigeaki. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate. United States: N. p., 2014. Web. doi:10.1063/1.4874800.
Taoka, Noriyuki, Fukudome, Motoshi, Takeuchi, Wakana, Arahira, Takamitsu, Sakashita, Mitsuo, Nakatsuka, Osamu, & Zaima, Shigeaki. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate. United States. https://doi.org/10.1063/1.4874800
Taoka, Noriyuki, Fukudome, Motoshi, Takeuchi, Wakana, Arahira, Takamitsu, Sakashita, Mitsuo, Nakatsuka, Osamu, and Zaima, Shigeaki. 2014. "Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate". United States. https://doi.org/10.1063/1.4874800.
@article{osti_22273461,
title = {Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate},
author = {Taoka, Noriyuki and Fukudome, Motoshi and Takeuchi, Wakana and Arahira, Takamitsu and Sakashita, Mitsuo and Nakatsuka, Osamu and Zaima, Shigeaki},
abstractNote = {The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.},
doi = {10.1063/1.4874800},
url = {https://www.osti.gov/biblio/22273461}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 115,
place = {United States},
year = {Wed May 07 00:00:00 EDT 2014},
month = {Wed May 07 00:00:00 EDT 2014}
}