Domain switching of fatigued ferroelectric thin films

Journal Article · Mon May 12 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4876605· OSTI ID:22273419

Tak Lim, Yun ^[1]; Shin, Young-Han ^[2]

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1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
2. Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

• OSTI ID: 22273419
• Journal Information: Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DEPOLARIZATION
ELECTRIC FIELDS
FATIGUE
FERROELECTRIC MATERIALS
PZT
THIN FILMS