Terahertz oscillations in an In{sub 0.53}Ga{sub 0.47}As submicron planar Gunn diode
- School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
- School of Engineering and Physical Sciences, University of Aberdeen, Aberdeen AB24 SFX (United Kingdom)
- H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue BS8 1TL (United Kingdom)
- Electronic Engineering Department, Faculty of Technology, De Montfort University, Leicester LE1 9BH (United Kingdom)
The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode—the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In{sub 0.53}Ga{sub 0.47}As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 μW was obtained from a 600 nm long × 120 μm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible—the Monte Carlo model used predicts power output at frequencies over 300 GHz.
- OSTI ID:
- 22271219
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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