Excitons in a quasi-one-dimensional quantum nanorod under a strong electric field
- Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States)
The response of an exciton in the ground and first excited states to a strong DC electric field is studied in a quasi-one-dimensional nano quantum well (i.e., nanorod) bounded by high symmetric barriers by studying the energy, the oscillator strength, the root-mean-square (RMS) average of the electron-hole (e-h) separation, and the average positions of the electron and the hole. The interplaying effect between the barrier confinement, e-h attraction, and the field-induced e-h separation for exciton binding is examined. We find that, for a long nanorod, the exciton energy, as well as, the oscillator strength drops abruptly as a function of the field near the exciton-dissociation field while the RMS average of the e-h separation rises rapidly. For shorter rods, the transition is more gradual due to the combined effect of the confinement and the long-range e-h interaction. A strong field is shown to transform the optically-inactive first excited state into an optically-active state in the field range between the dissociation field of the ground state and that of the first excited level. We also find that, in the ground state, the (lighter) electron is dragged by the (heavier) hole below the dissociation field. The dependence of the above mentioned properties on the rod length is also investigated for varying fields. The results are compared with those obtained for the rods with parabolic confinement.
- OSTI ID:
- 22271215
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Slow Auger Recombination of Trapped Excitons Enables Efficient Multiple Electron Transfer in CdS–Pt Nanorod Heterostructures
Interlayer exciton optoelectronics in a 2D heterostructure p–n junction