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Title: Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Abstract

Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP{sub 0.98}N{sub 0.02}/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP{sub 0.98}N{sub 0.02} in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP{sub 0.98}N{sub 0.02}/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk.

Authors:
 [1]; ;  [2];  [2];  [2];  [1]
  1. Technische Universität Ilmenau, Institut für Physik, Gustav-Kirchhoff-Str. 5, 98684 Ilmenau (Germany)
  2. Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)
Publication Date:
OSTI Identifier:
22271195
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ENERGY STORAGE; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HYDROGEN; INTERFACES; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; VAPOR PHASE EPITAXY; VISIBLE RADIATION; X-RAY DIFFRACTION

Citation Formats

Supplie, Oliver, Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, May, Matthias M., Stange, Helena, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Höhn, Christian, Lewerenz, Hans-Joachim, California Institute of Technology, Joint Center for Artificial Photosynthesis, 1200 East California Boulevard, Pasadena, California 91125, Hannappel, Thomas, and Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin. Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100). United States: N. p., 2014. Web. doi:10.1063/1.4869121.
Supplie, Oliver, Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, May, Matthias M., Stange, Helena, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Höhn, Christian, Lewerenz, Hans-Joachim, California Institute of Technology, Joint Center for Artificial Photosynthesis, 1200 East California Boulevard, Pasadena, California 91125, Hannappel, Thomas, & Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin. Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100). United States. https://doi.org/10.1063/1.4869121
Supplie, Oliver, Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, May, Matthias M., Stange, Helena, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Höhn, Christian, Lewerenz, Hans-Joachim, California Institute of Technology, Joint Center for Artificial Photosynthesis, 1200 East California Boulevard, Pasadena, California 91125, Hannappel, Thomas, and Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin. 2014. "Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)". United States. https://doi.org/10.1063/1.4869121.
@article{osti_22271195,
title = {Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)},
author = {Supplie, Oliver and Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin and Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin and May, Matthias M. and Stange, Helena and Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin and Höhn, Christian and Lewerenz, Hans-Joachim and California Institute of Technology, Joint Center for Artificial Photosynthesis, 1200 East California Boulevard, Pasadena, California 91125 and Hannappel, Thomas and Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin},
abstractNote = {Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP{sub 0.98}N{sub 0.02}/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP{sub 0.98}N{sub 0.02} in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP{sub 0.98}N{sub 0.02}/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk.},
doi = {10.1063/1.4869121},
url = {https://www.osti.gov/biblio/22271195}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 115,
place = {United States},
year = {Fri Mar 21 00:00:00 EDT 2014},
month = {Fri Mar 21 00:00:00 EDT 2014}
}