Determination of the Fermi level position in dilute magnetic Ga{sub 1-x}Mn{sub x}N films
- Institute for Theoretical Physics, University of Bremen, D-28359 Bremen (Germany)
- Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)
- Institute of Physical Chemistry “Ilie Murgulescu,” Romanian Academy, 060021 Bucharest (Romania)
We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga{sub 1−x}Mn{sub x}N films with x=4% and x=10% as grown by molecular beam epitaxy. By means of ellipsometric measurements, the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.
- OSTI ID:
- 22271154
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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