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Title: On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon

Abstract

The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results.

Authors:
; ; ;  [1]
  1. Technische Universität Dresden, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22271089
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER LIFETIME; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; ELECTRON DIFFRACTION; GRAIN BOUNDARIES; IRON; POLYCRYSTALS; SCHOTTKY BARRIER DIODES; SILICON; TRAPS

Citation Formats

Mchedlidze, T., Nacke, M., Hieckmann, E., and Weber, J. On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon. United States: N. p., 2014. Web. doi:10.1063/1.4837997.
Mchedlidze, T., Nacke, M., Hieckmann, E., & Weber, J. On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon. United States. https://doi.org/10.1063/1.4837997
Mchedlidze, T., Nacke, M., Hieckmann, E., and Weber, J. 2014. "On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon". United States. https://doi.org/10.1063/1.4837997.
@article{osti_22271089,
title = {On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon},
author = {Mchedlidze, T. and Nacke, M. and Hieckmann, E. and Weber, J.},
abstractNote = {The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results.},
doi = {10.1063/1.4837997},
url = {https://www.osti.gov/biblio/22271089}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 115,
place = {United States},
year = {Tue Jan 07 00:00:00 EST 2014},
month = {Tue Jan 07 00:00:00 EST 2014}
}